N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 400A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max)@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive

文件：347.76 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

文件：354.68 Kbytes 页数：14 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

文件：34.22 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

文件：33.48 Kbytes 页数：2 Pages

PANASONIC

松下