N-Channel MOSFET

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

文件：372.17 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel MOSFET

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

文件：345.47 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

2SK1056, 2SK1057, 2SK1058 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary charac

文件：40.07 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

文件：91.25 Kbytes 页数：8 Pages

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瑞萨

Silicon N Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with

文件：72.48 Kbytes 页数：6 Pages

RENESAS

瑞萨