N-Channel MOSFET

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：345.03 Kbytes 页数：2 Pages

ISC

无锡固电

3.65x6.15mm SINGLE CHIP LED LIGHT BARS

Description The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices a

文件：789.16 Kbytes 页数：6 Pages

KINGBRIGHT

今台电子

3.65x6.15mm SINGLE CHIP LED LIGHT BARS

Description The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices a

文件：789.16 Kbytes 页数：6 Pages

KINGBRIGHT

今台电子

3.65x6.15mm SINGLE CHIP LED LIGHT BARS

Description The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices a

文件：789.16 Kbytes 页数：6 Pages

KINGBRIGHT

今台电子