isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：336.07 Kbytes 页数：2 Pages

ISC

无锡固电

RAID Port Multiplier Chip

文件：232.65 Kbytes 页数：3 Pages

JMICRON

智微科技

VersaKrimp??Parallel Splice for 3/0 AWG Wire

文件：104.25 Kbytes 页数：2 Pages

Molex

莫仕

Common Mode Inductor

文件：26.68 Kbytes 页数：1 Pages

RHOMBUS-IND