isc N-Channel MOSFET Transistor

FEATURES ·Drain Source Voltage : VDSS= 160V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·DC/DC Converters ·Low frequency power amplifier

文件：329.48 Kbytes 页数：2 Pages

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TI

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今台电子