isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current GainhFE： 10-40@ IC= 1A VCEO：1200V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications

文件：284 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A) • Low CissCiss= 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-2

文件：120.71 Kbytes 页数：8 Pages

NEC

瑞萨

Square Type

文件：32.46 Kbytes 页数：1 Pages

Panasonic

松下

Square Type

文件：31.34 Kbytes 页数：1 Pages

Panasonic

松下