OptiMOS ™ 6 n 沟道功率 MOSFET 80 V，采用 SuperSO8

\n优势:\n• Lower conduction losses than OptiMOS™ 5\n• Lower switching losses than OptiMOS™ 5\n• Wide portfolio for flexible supply chain\n• False turn-on immunity\n• Improved power, SOA & avalanche current\n• Robust reliable performance;

Infineon

英飞凌

OptiMOS ™ 6 N 沟道功率 MOSFET 80 V，采用 SuperSO8 双面冷却

OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling • High performance silicon technology\n• RDS(on)optimized for target application\n• Low top-sideRthJC (0/72 K/W)\n• 175°C rated\n• Industrial qualification\n\n优势:\n• Lower conduction losses than OptiMOS™ 5\n• Lower switching losses than OptiMOS™ 5\n• Improved heat dissipation\n• Improved power, SOA ;

Infineon

英飞凌

丝印：031N08SC；Package：PG-WSON-8；MOSFET OptiMOS™ 6 Power ‑Transistor, 80 V

文件：1.09878 Mbytes 页数：15 Pages

INFINEON

英飞凌

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