IS9-2100ARHSLASHPROTO中文资料瑞萨数据手册PDF规格书

厂商型号	IS9-2100ARHSLASHPROTO
功能描述	Radiation Hardened High Frequency Half Bridge Drivers
文件大小	258.85 Kbytes
页面数量	7 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-9 23:00:00
人工找货	IS9-2100ARHSLASHPROTO价格和库存，欢迎联系客服免费人工找货

特性 Features

▪ Electrically screened to DLA SMD # 5962-99536

▪ QML qualified per MIL-PRF-38535 requirements

▪ Radiation environment

• TID Rad Hard Assurance (RHA) testing

◦ HDR (50-300rad(Si)/s): 300krad(Si)

◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only)

• DI RSG process provides latch-up immunity

• SEU rating: <90MeV/mg/cm2

• Vertical device architecture reduces sensitivity to

low dose rates

▪ Bootstrap supply maximum voltage to 150V

▪ Drives 1000pF load at 1MHz with rise and fall times

of 30ns (typical)

▪ 1.5A (typical) peak output current

▪ Independent inputs for non-half bridge topologies

▪ Low DC power consumption: 60mW (typical)

▪ Operates with VDD = VCC over 12V to 20V range

▪ Low-side supply undervoltage protection