64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

64Mb Async/Page PSRAM

Features  Asynchronous and page mode interface  Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  Page mode read access InterpageRead access : 60ns, 70ns IntrapageRead access : 25n

文件：902.96 Kbytes 页数：34 Pages

ISSI

矽成半导体

静态随机存取存储器 64Mb Pseudo 静态随机存取存储器 4Mx16 70ns A-Temp

ISSI

矽成半导体

静态随机存取存储器 64Mb Pseudo 静态随机存取存储器 4Mx16 70ns A-Temp

ISSI

矽成半导体