IS65WV12816BLL规格书应用电路供应代理第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS65WV12816BLL-55BLA3	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-55TA	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-55TA1	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-55TA2	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-55TA3	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-55TLA3	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-70B2A	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-70B2A1	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-70B2A2	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS65WV12816BLL-70B2A3	文件：321.21 Kbytes Page：19 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r 文件：321.21 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS65WV12816BLL
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS65WV12816BLL	ISSI	25+	BGA	4500	ISSI存储芯片在售	询价
深圳市毅创腾电子科技有限公司	IS65WV12816BLL-55TA3	ISSI	23+	44-TSOPII	9550	专业分销产品!原装正品!价格优势!	询价
深圳市卓越微芯电子有限公司	IS65WV12816BLL-55TLA3	ISSI	25+	TSOP44	80	百分百原装正品真实公司现货库存本公司只做原装可	询价
千层芯半导体(深圳)有限公司	IS65WV12816BLL-55TA3-TR	ISSI	24+	SMD	15600	静态随机存取存储器2M(128Kx16)55nsAsync静态随机存取	询价
深圳市振宏微科技有限公司	IS65WV12816BLL-55TA3	ISSI	23+	NA	261	专做原装正品,假一罚百!	询价
深圳市斌腾达科技有限公司	IS65WV12816BLL-55BLA3	ISSI, Integrated Silicon Solut	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS65WV12816BLL-55TA3-TR	ISSI, Integrated Silicon Solut	24+	44-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS65WV12816BLL-55TLA3-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS65WV12816BLL-55BLA3	ISSI(美国芯成)	2447	miniBGA-48(6x8)	315000	480个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS65WV12816BLL-55TA3-TR	ISSI	25+	TSOP-44	1001	就找我吧!--邀您体验愉快问购元件!	询价

更多IS65WV12816BLL供应商更新时间2026-2-10 9:03:00

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