256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：212.36 Kbytes 页数：21 Pages

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256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

文件：339.65 Kbytes 页数：22 Pages

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矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

文件：574.38 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件：751.83 Kbytes 页数：14 Pages

ISSI

矽成半导体