64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：97.51 Kbytes 页数：17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：92.57 Kbytes 页数：17 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：92.57 Kbytes 页数：17 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：92.57 Kbytes 页数：17 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：97.51 Kbytes 页数：17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc