DESCRIPTION

The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

FEATURES

• High-speed access times: 8, 10, 12 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CE and OE options

• CEpower-down

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

– 32-pin 300-mil SOJ

– 32-pin 400-mil SOJ

– 32-pin TSOP (Type II)

– 32-pin STSOP (Type I)

– 36-pin BGA (8mmx10mm)

• Lead-free Available

IS63LV1024-8KI属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS63LV1024-8KI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。