256Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 8 mA (max) at 3.6V, 20 MHz, 85°C. - CMOS Standby Current: 4 uA (typ). • 256K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and

文件：546.86 Kbytes 页数：23 Pages

ISSI

矽成半导体

256Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 8 mA (max) at 3.6V, 20 MHz, 85°C. - CMOS Standby Current: 4 uA (typ). • 256K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and

文件：546.86 Kbytes 页数：23 Pages

ISSI

矽成半导体

256Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 16/20 MHz Clock rate - SPI/SDI/SQI mode • Low-Power CMOS Technology: - Read Current: 8 mA (max) at 3.6V, 20 MHz, 85°C. - CMOS Standby Current: 4 uA (typ). • 256K x 8-bit Organization: - 32-byte page • Byte, Page and Sequential mode for Reads and

文件：546.86 Kbytes 页数：23 Pages

ISSI

矽成半导体

256Kx8 LOW VOLTAGE, FAST SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 30/45 MHz Clock rate - SPI/SDI/SQI mode • Single Power Supply: - VDD = 1.65V - 2.2V (IS62/65WVS2568GALL) - VDD = 2.70V - 3.6V (IS62/65WVS2568GBLL) • Read Latency: - SPI mode: 8 clocks - DPI mode: 4 clocks - QPI mode: 2 clocks • Low-Power CMOS T

文件：556.48 Kbytes 页数：24 Pages

ISSI

矽成半导体

256Kx8 LOW VOLTAGE, FAST SERIAL SRAM with SPI, SDI and SQI INTERFACE

FEATURES • SPI-Compatible Bus Interface: - 30/45 MHz Clock rate - SPI/SDI/SQI mode • Single Power Supply: - VDD = 1.65V - 2.2V (IS62/65WVS2568GALL) - VDD = 2.70V - 3.6V (IS62/65WVS2568GBLL) • Read Latency: - SPI mode: 8 clocks - DPI mode: 4 clocks - QPI mode: 2 clocks • Low-Power CMOS T

文件：556.48 Kbytes 页数：24 Pages

ISSI

矽成半导体