512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou

文件：465.75 Kbytes 页数：16 Pages

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou

文件：465.75 Kbytes 页数：16 Pages

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou

文件：465.75 Kbytes 页数：16 Pages

ISSI

矽成半导体

Very Low Power/Voltage CMOS SRAM

文件：280.7 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

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Very Low Power/Voltage CMOS SRAM

文件：280.7 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商