IS62WV51216ALL-70TI中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time: 45ns, 55ns

• CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 1.65V--2.2V VDD (62WV51216ALL)

– 2.5V--3.6V VDD (62WV51216BLL)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available