256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：73.55 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：73.55 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：73.55 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

文件：458.23 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：73.55 Kbytes 页数：14 Pages

ISSI

矽成半导体