IS62WV25616BLL集成电路（IC）的存储器规格书PDF中文资料

DESCRIPTION

TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation

36 mW (typical) operating

9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.65V--2.2V VDD (IS62WV25616ALL)

2.5V--3.6V VDD (IS62WV25616BLL)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available