256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

文件：112.06 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

文件：112.06 Kbytes 页数：14 Pages

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

文件：112.06 Kbytes 页数：14 Pages

ISSI

矽成半导体

TSOP-44

ISSI

矽成半导体

上传：深圳市富利微电子科技有限公司

VFBGA-48(6x8)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司