2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

文件：116.92 Kbytes 页数：16 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

文件：572.61 Kbytes 页数：15 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

文件：572.61 Kbytes 页数：15 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

文件：116.92 Kbytes 页数：16 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

文件：116.92 Kbytes 页数：16 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

文件：572.61 Kbytes 页数：15 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

文件：572.61 Kbytes 页数：15 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

文件：116.92 Kbytes 页数：16 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSIs highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low

文件：116.92 Kbytes 页数：16 Pages

ISSI

矽成半导体

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V

文件：572.61 Kbytes 页数：15 Pages

ISSI

矽成半导体