128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：468.39 Kbytes 页数：16 Pages

ISSI

矽成半导体

128Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV1288FALL) – 2.2V-3.6V VDD (IS62/65WV1288FBLL) 

文件：909.25 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：111.31 Kbytes 页数：15 Pages

ISSI

矽成半导体

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：111.31 Kbytes 页数：15 Pages

ISSI

矽成半导体

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

文件：468.39 Kbytes 页数：16 Pages

ISSI

矽成半导体