128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：111.31 Kbytes 页数：15 Pages

ISSI

矽成半导体

128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

文件：111.31 Kbytes 页数：15 Pages

ISSI

矽成半导体

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32TSOP I

ISSI, Integrated Silicon Solution Inc

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32TSOP I

ISSI, Integrated Silicon Solution Inc

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32TSOP I

ISSI, Integrated Silicon Solution Inc