128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Th

文件：728.5 Kbytes 页数：17 Pages

ISSI

矽成半导体

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Th

文件：728.5 Kbytes 页数：17 Pages

ISSI

矽成半导体

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Th

文件：728.5 Kbytes 页数：17 Pages

ISSI

矽成半导体

TSOP-44

ISSI

矽成半导体

上传：深圳市富利微电子科技有限公司

VFBGA-48(6x8)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司