64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields access times as fast as 200 n

文件：82.37 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

ISSI

矽成半导体