IS62LV12816L规格书供应价格矽成半导体ICSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS62LV12816L	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-100B	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-100BI	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-100T	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-100TI	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-55B	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-55BI	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-55T	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-55TI	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI
IS62LV12816L-70B	文件：462.78 Kbytes Page：10 Pages	128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ICSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performanc 文件：462.78 Kbytes 页数：10 Pages	ICSI	ICSI

详细参数

型号：
IS62LV12816L
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	IS62LV12816L-10BLI	ISSI	16+	BGA	4000	进口原装现货/价格优势!	询价
深圳市益百分电子有限公司	IS62LV12816LL-70T	ISSI	TSOP44		1926	全新原装进口自己库存优势	询价
深圳市卓越微芯电子有限公司	IS62LV12816LL-70TI	ICSI	25+	TSOP	5008	百分百原装正品真实公司现货库存本公司只做原装可	询价
齐创科技(上海,北京,青岛)有限公司	IS62LV12816LL-70T	ISSI	23+	TSOP44	5000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	IS62LV12816LL-70BI	ISSI	24+	(BGA)	4858	原装现货假一罚十	询价
深圳市欧立现代科技有限公司	IS62LV12816LL-55BI	ISSI	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市福田区绿盛电子商行	IS62LV12816LL-70TI	ISSI	2015+	SMD/DIP	19889	一级代理原装现货,特价热卖!	询价
上海专毅电子科技有限公司	IS62LV12816LL-70T	ISSI	17+	TSOP44	9988	只做原装进口,自己库存	询价
上海鑫科润电子科技有限公司	IS62LV12816LL-70BI	ISSI	02+	BGA	225	原装现货海量库存欢迎咨询	询价
上海意淼电子科技有限公司	IS62LV12816LL-55BI	德国艾赛斯	23+	模块	6500	全新原装假一赔十	询价

更多IS62LV12816L供应商更新时间2025-12-13 8:30:00

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