128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power

文件：94.45 Kbytes 页数：10 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power

文件：94.45 Kbytes 页数：10 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power

文件：94.45 Kbytes 页数：10 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power

文件：94.45 Kbytes 页数：10 Pages

ISSI

矽成半导体