256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：212.36 Kbytes 页数：21 Pages

ISSI

矽成半导体

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Sta

文件：339.65 Kbytes 页数：22 Pages

ISSI

矽成半导体

256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 20ns  Single power supply – 1.65V-2.2V VDD  Low Standby Current:1.5mA (typical)  Fully static operation: no clock or refresh required  Data control  Three state outputs  Industrial and Automotive temperature support  Lead-free available  Error

文件：900.54 Kbytes 页数：15 Pages

ISSI

矽成半导体

Data control for upper and lower bytes

文件：751.83 Kbytes 页数：14 Pages

ISSI

矽成半导体