IS61WV12816EDBLL-8BLI数据手册批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61WV12816EDBLL-8BLI	文件：564.83 Kbytes Page：14 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da 文件：564.83 Kbytes 页数：14 Pages	ISSI 矽成半导体	ISSI
IS61WV12816EDBLL-8TLI	文件：564.83 Kbytes Page：14 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da 文件：564.83 Kbytes 页数：14 Pages	ISSI 矽成半导体	ISSI
IS61WV20488BLL-10TLI	文件：0 bytes Page：0 Pages	TSOPII-44	ISSI(美国芯成) 上传：深圳市宇创芯科技有限公司	ISSI(美国芯成)
IS61WV20488FBLL-10BLI	文件：0 bytes Page：0 Pages	BGA	ISSI 矽成半导体上传：深圳市旺财半导体有限公司	ISSI
IS61WV25616BLL-10BLI	文件：0 bytes Page：0 Pages	TS0P44	ISSI 矽成半导体上传：深圳市纳艾斯科技有限公司	ISSI

更多IS61WV12816EDBLL-8BLI供应商更新时间2025-11-25 16:49:00