1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：465.71 Kbytes 页数：19 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：465.71 Kbytes 页数：19 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件：198.94 Kbytes 页数：20 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件：198.94 Kbytes 页数：20 Pages

ISSI

矽成半导体

Package：44-TSOP（0.400"，10.16mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：散装托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc