DESCRIPTION

TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access times: 8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CE and OE options

• CE power-down

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single power supply

Vdd 1.65V to 2.2V (IS61WV102416ALL)

speed = 20ns for Vdd 1.65V to 2.2V

Vdd 2.4V to 3.6V (IS61/64WV102416BLL)

speed = 10ns for Vdd 2.4V to 3.6V

speed = 8ns for Vdd 3.3V + 5

• Packages available:

– 48-ball miniBGA (9mm x 11mm)

– 48-pin TSOP (Type I)

• Industrial and Automotive Temperature Support

• Lead-free available

• Data control for upper and lower bytes

IS61WV102416BLL属于集成电路（IC） > 存储器。北京矽成半导体有限公司制造生产的IS61WV102416BLL存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。