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IS61VPD51218A-200TQ	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-200TQI	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B2	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B2	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B2I	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B2I	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B3	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B3	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B3I	文件：677.27 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a 文件：677.27 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI
IS61VPD51218A-250B3I	文件：208.17 Kbytes Page：32 Pages	256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5 文件：208.17 Kbytes 页数：32 Pages	ISSI 矽成半导体	ISSI

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IS61VPD51218A-200B2I	ISSI	23+		18690	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市壹芯创科技有限公司	IS61VPD51232	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市斌腾达科技有限公司	IS61VPD51236A-200B3	ISSI, Integrated Silicon Solut	21+	BGA	1000	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61VPD51236A-200B3	ISSI, Integrated Silicon Solut	24+	165-PBGA(13x15)	56200	一级代理/放心采购	询价
深圳市安富世纪电子有限公司	IS61VPD51236A-200B3	ISSI, Integrated Silicon Solu	23+	165-PBGA13x15	7300	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	IS61VPD51236A-200B3	ISSI Integrated Silicon Solut	25+	165-TBGA	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市芯为科技有限公司	IS61VPD51236A-200B3	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
艾睿（深圳）半导体有限公司	IS61VPD51236A-200B3-TR	ISSIINTEGRATEDSILICONSOLUTIONI	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多IS61VPD51218A供应商更新时间2026-2-5 11:10:00

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