2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：3.5295 Mbytes 页数：35 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：1.68486 Mbytes 页数：34 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：3.5295 Mbytes 页数：35 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：3.5295 Mbytes 页数：35 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：3.5295 Mbytes 页数：35 Pages

ISSI

矽成半导体

2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

文件：1.68486 Mbytes 页数：34 Pages

ISSI

矽成半导体