IS61SF12832-7.5TQ中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

The ISSI IS61SF12832 and IS61SF12836 are high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. It is organized as 131,072 words by 32 bits or 36 bits, fabricated with ISSIs advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

• Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 12 ns

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data inputs and control signals

• Pentium™ or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and 119-pin PBGA package

• Single +3.3V +10, –5 power supply

• Power-down snooze mode