1Mx18, 512Kx36 18Mb QUADP (Burst 4) SYNCHRONOUS SRAM

FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface

文件：886.62 Kbytes 页数：33 Pages

ISSI

矽成半导体

1Mx18, 512Kx36 18Mb QUADP (Burst 4) SYNCHRONOUS SRAM

FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface

文件：886.62 Kbytes 页数：33 Pages

ISSI

矽成半导体

1Mx18, 512Kx36 18Mb QUADP (Burst 4) SYNCHRONOUS SRAM

FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface

文件：886.62 Kbytes 页数：33 Pages

ISSI

矽成半导体

1Mx18, 512Kx36 18Mb QUADP (Burst 4) SYNCHRONOUS SRAM

FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface

文件：886.62 Kbytes 页数：33 Pages

ISSI

矽成半导体