2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件：809.57 Kbytes 页数：32 Pages

ISSI

矽成半导体

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件：809.57 Kbytes 页数：32 Pages

ISSI

矽成半导体

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 36MBIT PARALLEL 165LFBGA

ISSI, Integrated Silicon Solution Inc

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件：809.57 Kbytes 页数：32 Pages

ISSI

矽成半导体

2Mx18, 1Mx36 36Mb QUAD (Burst 4) SYNCHRONOUS SRAM

FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface fo

文件：809.57 Kbytes 页数：32 Pages

ISSI

矽成半导体