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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61QDB22M36C-300B4L	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-300M3	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-300M3I	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-300M3L	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-300M3LI	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-333B4	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-333B4L	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-333M3	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-333M3I	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M36C-333M3L	文件：766.59 Kbytes Page：29 Pages	4Mx18, 2Mx36 72Mb QUAD (Burst 2) Synchronous SRAM FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 400 MHz clock for high bandwidth  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write inpu 文件：766.59 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61QDB22M36
功能描述：
静态随机存取存储器 72M(2Mx36) 300ns Commercial Temp
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	IS61QDB22M36A-333B4LI	ISSI, Integrated Silicon Solut	21+	48-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市拓亿芯电子有限公司	IS61QDB22M36-250M3L	ISSI	25+	BGA	10500	全新原装现货,假一赔十	询价
瀚佳科技(深圳)有限公司	IS61QDB22M36A-333B4LI	ISSI, Integrated Silicon Solut	24+	165-LFBGA(13x15)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61QDB22M36A-333B4LI	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61QDB22M36A-250M3L	ISSI(美国芯成)	2447	LFBGA-165(15x17)	315000	105个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS61QDB22M36A-250M3L	ISSI	25+	BGA-165	105	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	IS61QDB22M36A333B4LI	ISSI Integrated Silicon Soluti	22+	165LFBGA (13x15)	9000	原厂渠道,现货配单	询价
深圳市祥瑞智科技有限公司	IS61QDB22M36A-333B4LI	ISSI	25+	LFBGA	100	原厂原装,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	IS61QDB22M36A-xxxM3LI	ISSI	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威雅利发展有限公司	IS61QDB22M36A-333B4LI	ISSI	1615+	LFBGA/165	12	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多IS61QDB22M36供应商更新时间2026-2-5 16:39:00

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