256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

文件：701.02 Kbytes 页数：37 Pages

ISSI

矽成半导体

Package：100-LQFP；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 100LQFP

ISSI, Integrated Silicon Solution Inc

Package：100-LQFP；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 100LQFP

ISSI, Integrated Silicon Solution Inc

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

文件：701.02 Kbytes 页数：37 Pages

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

文件：277.54 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE NO WAIT STATE BUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usi

文件：701.02 Kbytes 页数：37 Pages

ISSI

矽成半导体