256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

文件：277.54 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

文件：277.54 Kbytes 页数：35 Pages

ISSI

矽成半导体

256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

DESCRIPTION The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M wo

文件：277.54 Kbytes 页数：35 Pages

ISSI

矽成半导体

ISSI(美国芯成)
TFBGA-165(13x15)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

ISSI(美国芯成)
TFBGA-165(13x15)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司