IS61NLF25618A-6.5B3I中文资料北京矽成数据手册PDF规格书

DESCRIPTION

The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single Read/Write control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 119-ball PBGA, and 165-ball PBGA packages

• Power supply: NVF: VDD 2.5V (± 5), VDDQ 2.5V (± 5) NLF: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

• Industrial temperature available

• Lead-free available