128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM

DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor

文件：129.729 Kbytes 页数：20 Pages

ISSI

矽成半导体

128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM

DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor

文件：129.729 Kbytes 页数：20 Pages

ISSI

矽成半导体

128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM

DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor

文件：129.729 Kbytes 页数：20 Pages

ISSI

矽成半导体

128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM

DESCRIPTION The 4 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 131,072 words by 32 bits, 131,072 words by 36 bits and 262,144 wor

文件：129.729 Kbytes 页数：20 Pages

ISSI

矽成半导体