IS61LV3216-10T数据手册供应代理矽成半导体-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LV3216-10T	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-10K	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV51216-10TI	文件：0 bytes Page：0 Pages	TSOP44	ISSI 矽成半导体上传：深圳市佳杰伟业科技有限公司	ISSI
IS61LV51216-10TLI	文件：0 bytes Page：0 Pages	TSOP44	ISSI 矽成半导体上传：深圳市中广亿科技发展有限公司	ISSI
IS61LV51216-8TL	文件：0 bytes Page：0 Pages	TSOP44	ISSI 矽成半导体上传：深圳庞田科技有限公司	ISSI

更多IS61LV3216-10T供应商更新时间2025-11-22 9:50:00