Package：100-LQFP；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 3MBIT PARALLEL 100TQFP

ISSI, Integrated Silicon Solution Inc

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

文件：77.67 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

文件：77.67 Kbytes 页数：13 Pages

ISSI

矽成半导体

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power cons

文件：77.67 Kbytes 页数：13 Pages

ISSI

矽成半导体