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IS61LV12816-10T

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:88.69 Kbytes 页数:11 Pages

ISSI

矽成半导体

IS61LV12816-10T

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:59.28 Kbytes 页数:12 Pages

ISSI

矽成半导体

IS61LV12816-10T

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

文件:146.94 Kbytes 页数:11 Pages

ICSI

IS61LV12816-10TI

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

文件:146.94 Kbytes 页数:11 Pages

ICSI

IS61LV12816-10TI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:88.69 Kbytes 页数:11 Pages

ISSI

矽成半导体

IS61LV12816-10TI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件:59.28 Kbytes 页数:12 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS61LV12816-10T

  • 制造商:

    Integrated Silicon Solution Inc

  • 功能描述:

    Static RAM, 128Kx16, 44 Pin, Plastic, TSOP

供应商型号品牌批号封装库存备注价格
ICSI
24+
TSOP-44
2950
只做原厂渠道 可追溯货源
询价
ISSI
2021+
TSOP-44
6800
原厂原装,欢迎咨询
询价
ISSI
2023+
TSOP
53500
正品,原装现货
询价
ISSI
0224/0226
SOP44
2500
全新原装现货100真实自己公司
询价
ISSI
24+/25+
1000
原装正品现货库存价优
询价
ISSI
TSOP44
356
全新原装进口自己库存优势
询价
ISSI
24+
TSSOP
2000
原装现货假一罚十
询价
ISSI
17+
TSSOP
6200
100%原装正品现货
询价
ISSI
23+
TSSOP
5000
原装正品,假一罚十
询价
ISSI
25+
TSOP
1313
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IS61LV12816-10T供应商 更新时间2025-10-9 11:04:00