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IS61LPS25618A-200TQ集成电路(IC)的存储器规格书PDF中文资料

IS61LPS25618A-200TQ
厂商型号

IS61LPS25618A-200TQ

参数属性

IS61LPS25618A-200TQ 封装/外壳为100-LQFP;包装为卷带(TR);类别为集成电路(IC)的存储器;产品描述:IC SRAM 4.5MBIT PARALLEL 100TQFP

功能描述

128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

封装外壳

100-LQFP

文件大小

168.16 Kbytes

页面数量

26

生产厂商 Integrated Silicon Solution Inc
企业简称

ISSI北京矽成

中文名称

北京矽成半导体有限公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2025-6-30 13:58:00

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IS61LPS25618A-200TQ规格书详情

DESCRIPTION

The ISSIIS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performancememory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 bits. The IS61(64)LPS/VPS12836A is organized as 131,072 words by 36 bits. The IS61(64)LPS/ VPS25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and control

• Burst sequence control using MODE input

• Three chip enable option for simple depth expansion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• Power Supply

LPS: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5

VPS: VDD 2.5V + 5, VDDQ 2.5V + 5

• JEDEC 100-Pin TQFP, 119-ball PBGA, and 165-ball PBGA packages

• Automotive temperature available

• Lead Free available

产品属性

  • 产品编号:

    IS61LPS25618A-200TQI-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    卷带(TR)

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    4.5Mb(256K x 18)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    100-LQFP

  • 供应商器件封装:

    100-LQFP(14x20)

  • 描述:

    IC SRAM 4.5MBIT PARALLEL 100TQFP

供应商 型号 品牌 批号 封装 库存 备注 价格
ISSI
2020+
TQFP100
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI(美国芯成)
2021+
TQFP-100(14x20)
499
询价
ISSI
24+
QFP
60000
询价
ISSI/芯成
24+
TQFP100
25540
郑重承诺只做原装进口现货
询价
ISSI
23+
QFP
43
原装现货假一赔十
询价
ISSI
23+
TQFP100
8650
受权代理!全新原装现货特价热卖!
询价
ISSI
1421+
TQFP100
761
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ISSI, Integrated Silicon Solu
23+
100-TQFP14x20
7300
专注配单,只做原装进口现货
询价
2017+
TQFP100
6528
只做原装正品假一赔十!
询价
ISSI
2016+
QFP
3500
本公司只做原装,假一罚十,可开17%增值税发票!
询价