256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM

DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218, IS61LPD25632, IS61LPD25636, and IS61LPD51218 are high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. The IS61SPD25632

文件：154.12 Kbytes 页数：22 Pages

ISSI

矽成半导体

256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs a

文件：677.27 Kbytes 页数：32 Pages

ISSI

矽成半导体

256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

DESCRIPTION The ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, and the IS61LPD/VPD5

文件：208.17 Kbytes 页数：32 Pages

ISSI

矽成半导体

256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM

DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218, IS61LPD25632, IS61LPD25636, and IS61LPD51218 are high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. The IS61SPD25632

文件：154.12 Kbytes 页数：22 Pages

ISSI

矽成半导体