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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LF12836EC	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B2L	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5B3L	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-6.5TQL	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B2L	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI
IS61LF12836EC-7.5B3L	文件：2.40485 Mbytes Page：36 Pages	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs an 文件：2.40485 Mbytes 页数：36 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61LF12836EC
功能描述：
静态随机存取存储器 4M, 3.3V, 6.5ns 128Kx36 Sync 静态随机存取存储器
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	IS61LF12836EC-7.5TQLI	ISSI, Integrated Silicon Solut	24+	100-LQFP(14x20)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61LF12836EC-7.5TQLI-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61LF12836EC-6.5TQLI	ISSI(美国芯成)	2447	LQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS61LF12836EC-7.5TQLI	ISSI	25+	QFP-100	932	就找我吧!--邀您体验愉快问购元件!	询价
讯运(深圳/上海)电子有限公司	IS61LF12836EC-7.5TQLI	ISSI(美国芯成)	2021+	LQFP-100(14x20)	499		询价
深圳市易讯博科技有限公司	IS61LF12836EC-7.5TQLI	ISSI	22+	NA	493	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IS61LF12836EC7.5TQLITR	ISSI Integrated Silicon Soluti	22+	100LQFP (14x20)	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	IS61LF12836EC-7.5TQLI	ISSI	23+	TQFP100	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威雅利发展有限公司	IS61LF12836EC-7.5TQLI	ISSI	21+	TQFP100	900	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市鹏顺微电子科技有限公司	IS61LF12836EC-6.5TQLI	ISSI(美国芯成)	2022+原装正品	LQFP-100(14x20)	18000	支持工厂BOM表配单公司只做原装正品货	询价

更多IS61LF12836EC供应商更新时间2026-1-30 10:03:00

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