| 订购数量 | 价格 |
|---|---|
| 1+ |
IS61C64AL-10TLI 集成电路(IC)存储器 ISSI/矽成半导体
- 详细信息
- 规格书下载
产品参考属性
- 类型
描述
- 产品编号:
IS61C64AL-10TLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
- 包装:
卷带(TR)
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 异步
- 存储容量:
64Kb(8K x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
10ns
- 电压 - 供电:
4.75V ~ 5.25V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
28-TSSOP(0.465",11.80mm 宽)
- 供应商器件封装:
28-TSOP I
- 描述:
IC SRAM 64KBIT PARALLEL 28TSOP I
供应商
相近型号
- IS61C64B10JI
- IS61C64AL-10JLI
- IS61C64B-10JI
- IS61C64AL10JLI
- IS61C64B-10T
- IS61C64AL-10JI
- IS61C64B15J
- IS61C64AL-10J
- IS61C64B-15J
- IS61C64AL
- IS61C64B-15JI
- IS61C64AH-25U
- IS61C64B-20J
- IS61C64AH25U
- IS61C64B-20JI
- IS61C64AH-25N
- IS61C64-L25N
- IS61C64AH-20U
- IS61C66-15N
- IS61C64AH-20T
- IS61C66-20N
- IS61C67-15N
- IS61C64AH-20NIC
- IS61C67-20N
- IS61C64AH-20N
- IS61C68-25N
- IS61C64AH-20M
- IS61C88-20N
- IS61DDB21M18A300B4L
- IS61C64AH-20J
- IS61DDB21M18A-300B4L
- IS61C64AH-15T
- IS61DDB21M18A300M3L
- IS61DDB21M18A-300M3L
- IS61C64AH-15N
- IS61DDB21M18C-250M3L
- IS61C64AH-15JP.SOJ
- IS61DDB21M36250M3
- IS61C64AH-15J
- IS61DDB21M36-250M3
- IS61C64AH15J
- IS61DDB21M36250M3L
- IS61C64AH-15H
- IS61DDB21M36-250M3L
- IS61C64AH-15/20
- IS61DDB21M36275M3
- IS61C64AH-12T
- IS61DDB21M36-275M3
- IS61C64AH-12J
- IS61DDB21M36A250M3L



