1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

RLDRAM® 2/3

·Reduced cycle time (up to 8ns at 1GHz)\n·Available in different densities providing flexibility for different design requirements\n·Available in wide bus widths (x9, x18, x 36), separate and common I/Os\n·Different voltage supply to reduce power consumption\n·Supports commercial and industrial oper

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体

1066 MHz DDR operation (2133 Mb/s/ball datarate)

文件：6.55037 Mbytes 页数：113 Pages

ISSI

矽成半导体