576Mb (64Mbx9, 32Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES • 533MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed

文件：721.79 Kbytes 页数：36 Pages

ISSI

矽成半导体

8 internal banks

文件：978.11 Kbytes 页数：36 Pages

ISSI

矽成半导体

RLDRAM® 2 Memory

·Reduced cycle time (up to 8ns at 1GHz)\n·Available in different densities providing flexibility for different design requirements\n·Available in wide bus widths (x9, x18, x 36), separate and common I/Os\n·Different voltage supply to reduce power consumption\n·Supports commercial and industrial oper

ISSI

矽成半导体

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc

Package：144-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 576MBIT PAR 144FCBGA

ISSI, Integrated Silicon Solution Inc