288Mb (x9, x18) Separate I/O RLDRAM 2 Memory

文件：596.55 Kbytes 页数：34 Pages

ISSI

矽成半导体

RLDRAM® 2 Memory

·Reduced cycle time (up to 8ns at 1GHz)\n·Available in different densities providing flexibility for different design requirements\n·Available in wide bus widths (x9, x18, x 36), separate and common I/Os\n·Different voltage supply to reduce power consumption\n·Supports commercial and industrial oper

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

288Mb (32Mbx9, 16Mbx18) Separate I/O RLDRAM 2 Memory

FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexe

文件：1.32364 Mbytes 页数：36 Pages

ISSI

矽成半导体

RLDRAM® 2 Memory

·Reduced Row Cycle Time (tRC)\n·Available in different densities from 288Mb to 2.3Gb\n·Available inbus widths of x9, x18, x36\n·Separate and Common I/Os\n·Different voltage supply levels to reduce power consumption\n·Commercial and Industrial Temperature Grades\n·Long-term support

ISSI

矽成半导体